semiconductors summary v (br)dss = -30v; r ds(on) = 0.07 i d = -4.0a description this new generation of trench mosfets from zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. this makes them ideal for high efficiency, low voltage, power management applications. features ? low on-resistance ? fast switching speed ? low threshold ? low gate drive ? sot23-6 package applications ? dc - dc converters ? power management functions ? disconnect switches ? motor control device marking ? 317 ZXMP3A17E6 issue 2 - june 2003 advance information 1 30v p-channel enhancement mode mosfet device reel size tape width quantity per reel ZXMP3A17E6ta 7? 8mm 3000 units ZXMP3A17E6tc 13? 8mm 10000 units ordering information top view pinout s o t 2 3 - 6
ZXMP3A17E6 semiconductors issue 2 - june 2003 2 advance information parameter symbol v alue unit junction to ambient (a) r ja 113 c/w junction to ambient (b) r ja 73 c/w notes (a) for a device surface mounted on 25mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air conditions (b) for a device surface mounted on fr4 pcb measured at t 5 secs. (c) repetitive rating 25mm x 25mm fr4 pcb, d = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. refer to transient thermal impedance graph. thermal resistance parameter symbol limit unit drain-source voltage v dss -30 v gate source voltage v gs 20 v continuous drain current v gs =10v; t a =25c (b) v gs =10v; t a =70c (b) v gs =10v; t a =25c (a) i d -4.0 -3.2 -3.2 a pulsed drain current (c) i dm -14.4 a continuous source current (body diode) (b) i s -2.5 a pulsed source current (body diode) (c) i sm -14.4 a power dissipation at t a =25c (a) linear derating factor p d 1.1 8.8 w mw/c power dissipation at t a =25c (b) linear derating factor p d 1.7 13.6 w mw/c operating and storage temperature range t j :t stg -55 to +150 c absolute maximum ratings.
ZXMP3A17E6 semiconductors issue 2 - june 2003 3 advance information 0.1 1 10 10m 100m 1 10 0 25 50 75 100 125 150 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 100 100 1m 10m 100m 1 10 100 1k 1 10 100 100us 100ms 1s r ds(on) limited 1ms p-channel safe operating area single pulse, t amb =25c dc 10ms -i d drain current (a) -v ds drain-source voltage (v) derating curve max power dissipation (w) temperature (c) d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) single pulse t amb =25c pulse power dissipation maximum power (w) pulse width (s) characteristics
ZXMP3A17E6 semiconductors issue 2 - june 2003 advance information 4 parameter symbol min. typ. max. unit c onditions. static drain-source breakdown voltage v (br)dss -30 v i d =-250 a, v gs =0v zero gate voltage drain current i dss -0.5 av ds =-30v, v gs =0v gate-body leakage i gss 100 na v gs = 20v, v ds =0v gate-source threshold voltage v gs(th) -1.0 v i d =-250 a, v ds =v gs static drain-source on-state resistance (1) r ds(on) 0.070 0.110 v gs =-10v, i d =-3.2a v gs =-4.5v, i d =-2.5a forward transconductance (1)(3) g fs 6.4 s v ds =-15v,i d =-3.2a dynamic (3) input capacitance c iss 630 pf v ds =-15v, v gs =0v, f=1mhz output capacitance c oss 113 pf reverse transfer capacitance c rss 78 pf switching (2) (3) turn-on delay time t d(on) 1.74 ns v dd =-15v, i d =-1a r g ? 6.0 ,v gs =-10v rise time t r 2.87 ns turn-off delay time t d(off) 29.2 ns fall time t f 8.72 ns gate charge q g 8.28 nc v ds =-15v,v gs =-5v, i d =-3.2a total gate charge q g 15.8 nc v ds =-15v,v gs =-10v, i d =-3.2a gate-source charge q gs 1.84 nc gate-drain charge q gd 2.8 nc source-drain diode diode forward voltage (1) v sd -0.85 -1.2 v t j =25c, i s =-2.5a, v gs =0v reverse recovery time (3) t rr 19.5 ns t j =25c, i f =-1.7a, di/dt= 100a/ s reverse recovery charge (3) q rr 16.3 nc electrical characteristics (at t a = 25c unless otherwise stated). notes (1) measured under pulsed conditions. width = 300 s. duty cycle 2% . (2) switching characteristics are independent of operating junction temperature. (3) for design aid only, not subject to production testing.
ZXMP3A17E6 semiconductors issue 2 - june 2003 5 advance information 0.1 1 10 0.01 0.1 1 10 0.1 1 10 0.01 0.1 1 10 1234 0.1 1 10 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 0.1 1 10 0.1 1 10 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0.1 1 10 5v 10v 4v 3.5v -v gs 2.5v 2v 3v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 4v 3.5v 3v 2v 1.5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = -3.2a v gs(th) v gs =v ds i d = -250ua normalised r ds(on) and v gs( t h) tj junction temperature (c) 5v 10v 3v 2v 4v 3.5v 2.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance (?) -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a) typical characteristics
ZXMP3A17E6 semiconductors issue 2 - june 2003 6 advance information 0.1 1 10 0 200 400 600 800 1000 c rss c oss c iss v gs =0v f=1mhz c capacitance (pf) -v ds -drain-sourcevoltage(v) 0 5 10 15 20 0 2 4 6 8 10 i d = -3.2a v ds =-15v gate-sourcevoltagevgatecharge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) typical characteristics
ZXMP3A17E6 semiconductors issue 2 - june 2003 7 europe zetex plc fields new road chadderton oldham, ol9 8np united kingdom telephone (44) 161 622 4444 fax: (44) 161 622 4446 hq@zetex.com zetex gmbh streitfeldstra?e 19 d-81673 mnchen germany telefon: (49) 89 45 49 49 0 fax: (49) 89 45 49 49 49 europe.sales@zetex.com americas zetex inc 700 veterans memorial hwy hauppauge, ny 11788 usa telephone: (1) 631 360 2222 fax: (1) 631 360 8222 usa.sales@zetex.com asia pacific zetex (asia) ltd 3701-04 metroplaza tower 1 hing fong road kwai fong hong kong telephone: (852) 26100 611 fax: (852) 24250 494 asia.sales@zetex.com these offices are supported by agents and distributors in major countries world-wide. this publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. the company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. for the latest product information, log on to www.zetex.com ? zetex plc 2003 advance information dim millimetres inches dim millimetres inches min max min max min max min max a 0.90 1.45 0.35 0.057 e 2.60 3.00 0.102 0.118 a1 0.00 0.15 0 0.006 e1 1.50 1.75 0.059 0.069 a2 0.90 1.30 0.035 0.051 l 0.10 0.60 0.004 0.002 b 0.35 0.50 0.014 0.019 e 0.95 ref 0.037 ref c 0.09 0.20 0.0035 0.008 e1 1.90 ref 0.074 ref d 2.80 3.00 0.110 0.118 l 0 10 0 10 package dimensions controlling dimensions in millimetres approx conversions inches. a1 2 l datum a a c e aa2 e1 d b e e1 package outline pad layout details
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